au.\*:("HOVEL H")
Results 1 to 25 of 27
Selection :
Correlations of photoluminescence with defect densities in semi-insulating gallium arsenideHOVEL, H. J; GUIDOTTI, D.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2331-2338, issn 0018-9383Article
Model for degradation of band-gap photoluminescence in GaAsGUIDOTTI, D; HOVEL, H. J.Applied physics letters. 1988, Vol 53, Num 15, pp 1411-1413, issn 0003-6951Article
High-efficiency Ga1-xAlxAs-GaAs solar cellsWOODALL, J. W; HOVEL, H. J.Solar cells. 1990, Vol 29, Num 2-3, pp 167-172, issn 0379-6787, 6 p.Article
Modification of the Shockley-type surface state on Ag(111) by an adsorbed xenon layerHOVEL, H; GRIMM, B; REIHL, B et al.Surface science. 2001, Vol 477, Num 1, pp 43-49, issn 0039-6028Article
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAs-GaAs solar cellsWOODALL, J. M; HOVEL, H. J.Solar cells. 1990, Vol 29, Num 2-3, pp 173-177, issn 0379-6787, 5 p.Article
WNx diodes on plasma-treated GaAs surfacesPACCAGNELLA, A; CALLEGARI, A; BRASLAU, N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2595-2597, issn 0018-9383, 3 p., part 1Article
Tunneling spectroscopy on silver clusters at T = 5 K : size dependence and spatial energy shiftsHOVEL, H; GRIMM, B; BÖDECKER, M et al.Surface science. 2000, Vol 463, Num 1, pp L603-L608, issn 0039-6028Article
Degradation of band-gap photoluminescence in GaAsGUIDOTTI, D; HASAN, E; HOVEL, H. J et al.Applied physics letters. 1987, Vol 50, Num 14, pp 912-914, issn 0003-6951Article
Width of cluster plasmon resonances : Bulk dielectric functional and chemical interface dampingHÖVEL, H; FRITZ, S; HILGER, A et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 18178-18188, issn 0163-1829Article
Analysis of photoacoustic IR spectra of aerogel and silica powderHÖVEL, H; GROSSE, P; THEISS, W et al.Journal of non-crystalline solids. 1992, Vol 145, Num 1-3, pp 159-163, issn 0022-3093Conference Paper
Crystalline structure and orientation of gold clusters grown in preformed nanometer-sized pitsHOVEL, H; BECKER, T; BETTAC, A et al.Applied surface science. 1997, Vol 115, Num 2, pp 124-127, issn 0169-4332Article
Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAsEIZENBERG, M; CALLEGARI, A. C; SADANA, D. K et al.Applied physics letters. 1989, Vol 54, Num 17, pp 1696-1698, issn 0003-6951, 3 p.Article
Metal clusters on rare gas layers -growth and spectroscopy : Clusters at surfaces: Electronic properties and magnetismIRAWAN, T; BOECKER, D; GHALEH, F et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 82, Num 1, pp 81-86, issn 0947-8396, 6 p.Article
Photon energy dependence of the dynamic final-state effect for metal clusters at surfacesHÖVEL, H; BARKE, I; BOYEN, H.-G et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 4, pp 045424.1-045424.5, issn 1098-0121Article
Surface plasmon assisted photoemission from Au nanoparticles on graphiteKENNERKNECHT, C; HÖVEL, H; MERSCHDORF, M et al.Applied physics. B, Lasers and optics (Print). 2001, Vol 73, Num 4, pp 425-429, issn 0946-2171Article
Comment on laser-induced degradation of GaAs photoluminescencë. ResponseGUIDOTTI, D; HOVEL, H. J; RAJA, M. Y. A et al.Applied physics letters. 1988, Vol 53, Num 10, pp 927-928, issn 0003-6951Article
Process damage and contamination effects for shallow Si implanted GaAsBARATTE, H; FLEISCHMAN, A. J; SCILLA, G. J et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 1, pp 219-222, issn 0013-4651Article
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETsTISCHLER, M. A; LATULIPE, D; KUECH, T. F et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 824-828, issn 0022-0248Conference Paper
Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAsYIH-CHENG SHIH; CALLEGARI, A; MURAKAMI, M et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 2113-2121, issn 0021-8979Article
High resolution and high density ion beam lithography employing HSQ resistBRUCHHAUS, L; BAUERDICK, S; PETO, L et al.Microelectronic engineering. 2012, Vol 97, pp 48-50, issn 0167-9317, 3 p.Article
Tip-induced distortions in STM imaging of carbon nanotubesHÖVEL, H; DE MENECH, M; BÖDECKER, M et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2007, Vol 45, Num 3, pp 459-463, issn 1434-6060, 5 p.Article
300 mm SGOI/Strain-Si for high-performance CMOSREZNICEK, A; BEDELL, S. W; HOVEL, H. J et al.IEEE international SOI conference. 2004, pp 37-38, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper
Observation of domain-wall dynamics in rare-gas monolayers at T= 5 KGRIMM, B; HOVEL, H; BODECKER, M et al.Surface science. 2000, Vol 454-56, pp 618-622, issn 0039-6028Conference Paper
Characterization of ultra thin soi and ssoi substrates : Defect and strain analysisBEDELL, S. W; HOVEL, H; DOMENICUCCI, A et al.Proceedings - Electrochemical Society. 2005, pp 345-356, issn 0161-6374, isbn 1-56677-461-6, 12 p.Conference Paper
Defects and electrical consequences in SOI buried oxidesHOVEL, H. J; ALMONTE, M; LEE, J. D et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper
